Design and fabrication of planar guard ring termination for high-voltage SiC diodes
نویسندگان
چکیده
An optimized multiple ̄oating guard ring structure is investigated for the ®rst time as an edge termination method for high voltage 4H-SiC planar devices. Simulations were performed to investigate SiC guard ring termination, and determine the optimum guard ring spacing for planar diodes with up to four ̄oating rings. Simulated optimized designs predicted breakdown values from 40% of the ideal breakdown with a single ring, to 84% of the ideal value for diodes with four rings. Implanted 4H-SiC pn diodes with optimized guard ring designs were fabricated and results correlated to simulation. Experimental breakdown values of 1.2±1.3 kV for guard ring structure with four rings were in good agreement with simulated results. Ó 2000 Elsevier Science Ltd. All rights reserved.
منابع مشابه
4H-SiC pn Diode using Internal Ring(IR) Termination Technique
In this paper, the breakdown characteristic of 4H-SiC pn diode using Internal Ring(IR) termination technique is investigated. N-type 4H-SiC wafer having a 10um epilayer with a doping concentration of 5.4×10 15 /cm 3 was used to fabricate the pn diodes with one or two IRs. IR was formed by boron implantation of single energy of 360keV with 5×10 14 /cm 2 dose and activation annealing at 1700 o C ...
متن کاملElectric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure
In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H₂ plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment...
متن کامل4,308V, 20.9 mO·cm 4H-SiC MPS Diodes Based on a 30μm Drift Layer
This paper reports the design, fabrication and characterization of high voltage 4H-SiC merged PiN/Schottky-barrier (MPS) diodes with an active area of 1.4mm. For comparison purposes, Schottky barrier, PiN and MPS diodes of smaller size (8.1x10mm) have also been designed and fabricated on the same wafer with a 30μm, n=2x10cm doped drift layer. The Schottky spacing between the adjacent p+ regions...
متن کاملDesign and Fabrication of a Narrow-bandwidth Micromechanical Ring Filter using a Novel Process in UV-LIGA Technology
This paper presents the design and a new low-cost process for fabrication of a second-order micromechanical filter using UV-LIGA technology. The micromechanical filter consists of two identical bulk-mode ring resonators, mechanically coupled by a flexural-mode beam. A new lumped modeling approach is presented for the bulk-mode ring resonators and filter. The validity of the analytical derivatio...
متن کاملDesign and fabrication of cylindrical ionization chamber for application in radiation protection
According to International Atomic Energy Agency (IAEA) recommendations, the calibration of ionization chambers used for radiotherapy dosimetry follows the substitution method which demands the use of a reference ionization chamber. This work introduces the Design and fabrication of cylindrical ionization chamber for dosimetry to be used by standard dosimetry laboratories. The result of the qual...
متن کامل